sangdest microelectronics technical data green products data sheet n0127, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn SDUR60120W SDUR60120W ultrafast plastic rectifier applications: antiparallel diode for high frequency switching dev ices anti saturation diode snubber diode free wheeling diode in converters and motor control circuits rectifiers in switch mode power supplies (smps) inductive heating and melting uninterruptible power supplies (ups) ultrasonic cleaners and welders features: ultra-fast switching high current capability low reverse leakage current high surge current capability plastic material has ul flammability classification 94v-o this is a pb ? free device all smc parts are traceable to the wafer lot additional testing can be offered upon request mechanical dimensions: in mm / inches to-247ac
sangdest microelectronics technical data green products data sheet n0127, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn SDUR60120W marking diagram: where xxxxx is yywwl sdur = device type 60 = forward current (60a) 120 = reverse voltage (1200v) w = configuration ssg = ssg yy = year ww = week l = lot number cautions molding resin epoxy resin ul:94v-0 ordering information: device package shipping SDUR60120W to-247ac (pb-free) 30 pcs / tube for information on tape and reel specifications, in cluding part orientation and tape sizes, please ref er to our tape and reel packaging specification. maximum ratings: characteristics symbol condition max. units peak inverse voltage v rwm - 1200 v average rectified forward current i f (av) rectangular, d = 0.5,@tc=90c 60 a peak one cycle non- repetitive surge current i fsm t j = 45c; tp = 10 ms (50 hz), sine 500 a
sangdest microelectronics technical data green products data sheet n0127, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn SDUR60120W electrical characteristics: characteristics symbol condition max. units forward voltage drop* v f1 @ 60a, pulse, t j = 25 c 2.66 v v f2 @ 60a, pulse, t j = 150 c 1.74 v reverse current* i r1 @v r = rated v r t j =25 c 650 ua i r1 @v r = rated v r t j =150 c 2.5 ma reverse recovery time t rr i f =500ma,i r =1a,and i rm =250ma 50 ns pulse width < 300 s, duty cycle < 2% thermal-mechanical specifications: characteristics symbol condition specification units max. junction temperature t j - -55 to +175 c max. storage temperature t stg - -55 to +150 c maximum thermal resistance junction to case r q jc dc operation 0.65 k/w approximate weight wt - 6.7 g case style to-247ac
sangdest microelectronics technical data green products data sheet n0127, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn SDUR60120W disclaimer: 1- the information given herein, including the spec ifications and dimensions, is subject to change wit hout prior notice to improve product characteristics. before ordering, purchaser s are advised to contact the smc - sangdest microel ectronics (nanjing) co., ltd sales department for the latest version of the data sheet(s). 2- in cases where extremely high reliability is req uired (such as use in nuclear power control, aerosp ace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices th at feature assured safety or by means of users fail-safe precautions or other a rrangement . 3- in no event shall smc - sangdest microelectronic s (nanjing) co., ltd be liable for any damages that may result from an accident or any other cause during operation of the users unit s according to the datasheet(s). smc - sangdest mic roelectronics (nanjing) co., ltd assumes no responsibility for any intellectual prop erty claims or any other problems that may result f rom applications of information, products or circuits described in the datasheets. 4- in no event shall smc - sangdest microelectronic s (nanjing) co., ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exce eding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or s mc - sangdest microelectronics (nanjing) co., ltd. 6- the datasheet(s) may not be reproduced or duplic ated, in any form, in whole or part, without the ex pressed written permission of smc - sangdest microelectronics (nanjing) co., ltd. 7- the products (technologies) described in the dat asheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safet y nor are they to be applied to that purpose by the ir direct purchasers or any third party. when exporting these products (technologies) , the necessary procedures are to be taken in accor dance with related laws and regulations..
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